1 # Created by Octave 3.6.1, Sun Mar 25 17:34:24 2012 UTC <root@t61>
13 # name: <cell-element>
17 -- Function File: [A,B,C]= Mcapacitors(STRING,PARAMETERS,
18 PARAMETERNAMES,EXTVAR,INTVAR,T)
19 SBN file implementing models for capacitors.
21 STRING is used to select among models. Parameters are listed as
22 inner items. Possible models are:
24 1. STRING = "LIN" (Linear Capacitor)
25 - C -> capacitance value
27 2. STRING = "MULTICAP" (Multipole Capacitor)
28 - C -> capacitance values
30 3. STRING = "PDE_NMOS" (Drift-Diffusion PDE NMOS capacitor)
31 - tbulk -> bulk thickness
33 - tox -> oxide thickness
35 - Nnodes -> number of nodes of 1D grid
39 - toll -> absolute tolerance
41 - maxit -> max iterations number
45 See the `IFF file format specifications' for details about the
48 See also: prs_iff, asm_initialize_system, asm_build_system
54 # name: <cell-element>
58 SBN file implementing models for capacitors.
62 # name: <cell-element>
69 # name: <cell-element>
73 -- Function File: [A,B,C]= Mcurrentsources(STRING,PARAMETERS,
74 PARAMETERNAMES,EXTVAR,INTVAR,T)
75 SBN file implementing models for current sources.
77 STRING is used to select among models. Parameters are listed as
78 inner items. Possible models are:
80 1. STRING = "DC" (Static indipendent current source)
81 - I -> Current source value
83 2. STRING = "VCCS" (Voltage controlled current source)
84 - K -> Control parameter
86 3. STRING = "sinwave" (Sinusoidal indipendent current source)
87 - shift -> mean value of sinusoidal input
89 - Ampl -> amplitude of sinusoidal wave
91 - f -> frequency of sinusoidal wave
93 - delay -> delay of sinusoidal wave
95 4. STRING = "VCPS" (Voltage controlled power source)
96 - K -> Control parameter
98 See the `IFF file format specifications' for details about the
101 See also: prs_iff, asm_initialize_system, asm_build_system
107 # name: <cell-element>
111 SBN file implementing models for current sources.
115 # name: <cell-element>
122 # name: <cell-element>
126 -- Function File: [A,B,C]= Mdiode(STRING,PARAMETERS,
127 PARAMETERNAMES,EXTVAR,INTVAR,T)
128 SBN file implementing models for diodes.
130 STRING is used to select among models. Parameters are listed as
131 inner items. Possible models are:
133 - STRING = "simple" (Usual exponential diode model)
134 - Is -> reverse current
136 - Vth -> thermal voltage
138 - Rpar -> parasitic resistance
140 - STRING = "PDEsymmetric" (Drift-Diffusion PDE model)
141 - len -> diode length
143 - Nnodes -> number of nodes of 1D grid
145 - Dope -> doping (abrupt and symmetric)
147 - toll -> absolute tolerance
149 - maxit -> max iterations number
151 - Area -> device area
153 See the `IFF file format specifications' for details about the
156 See also: prs_iff, asm_initialize_system, asm_build_system
162 # name: <cell-element>
166 SBN file implementing models for diodes.
170 # name: <cell-element>
177 # name: <cell-element>
181 -- Function File: [A,B,C]= Minductors(STRING,PARAMETERS,
182 PARAMETERNAMES,EXTVAR,INTVAR,T)
183 SBN file implementing models for inductors.
185 STRING is used to select among models. Parameters are listed as
186 inner items. Possible models are:
188 1. STRING = "LIN" (Linear inductor model)
189 - L -> inductance value
191 See the `IFF file format specifications' for details about the
194 See also: prs_iff, asm_initialize_system, asm_build_system
200 # name: <cell-element>
204 SBN file implementing models for inductors.
208 # name: <cell-element>
215 # name: <cell-element>
219 -- Function File: [A,B,C]= Mnmosfet(STRING,PARAMETERS,
220 PARAMETERNAMES,EXTVAR,INTVAR,T)
221 SBN file implementing standard models for n-mosfets.
223 STRING is used to select among models. Parameters are listed as
224 inner items. Possible models are:
226 1. STRING = "simple" (Standard model for MOSFET)
227 - rd -> parasitic resistance between drain and source
229 - k -> k parameter for usual mosfet model
231 - Vth -> threshold voltage
233 2. STRING = "lincap" (Adds RC parasitics)
234 - rd -> parasitic resistance between drain and source
236 - k -> k parameter for usual mosfet model
238 - Vth -> threshold voltage
240 - Rs -> parasitic source resistance
242 - Rd -> parasitic drain resistance
244 - Cs -> gate-source capacitance
246 - Cd -> gate-drain capacitance
248 - Cb -> gate-bulk capacitance
250 See the `IFF file format specifications' for details about the
253 See also: prs_iff, asm_initialize_system, asm_build_system
259 # name: <cell-element>
263 SBN file implementing standard models for n-mosfets.
267 # name: <cell-element>
274 # name: <cell-element>
278 -- Function File: [J,G]= Mpdesympnjunct (LEN, DOPE, VA, AREA, NNODES,
279 TOLL, MAXIT, PTOLL, PMAXIT)
282 NOT SUPPOSED TO BE CALLED DIRECTLY BY USERS
287 # name: <cell-element>
296 # name: <cell-element>
303 # name: <cell-element>
307 -- Function File: [A,B,C]= Mpmosfet(STRING,PARAMETERS,
308 PARAMETERNAMES,EXTVAR,INTVAR,T)
309 SBN file implementing standard models for p-mosfets.
311 STRING is used to select among models. Parameters are listed as
312 inner items. Possible models are:
314 1. STRING = "simple" (Standard model for MOSFET)
315 - rd -> parasitic resistance between drain and source
317 - k -> k parameter for usual mosfet model
319 - Vth -> threshold voltage
321 2. STRING = "lincap" (Adds RC parasitics)
322 - rd -> parasitic resistance between drain and source
324 - k -> k parameter for usual mosfet model
326 - Vth -> threshold voltage
328 - Rs -> parasitic source resistance
330 - Rd -> parasitic drain resistance
332 - Cs -> gate-source capacitance
334 - Cd -> gate-drain capacitance
336 - Cb -> gate-bulk capacitance
338 See the `IFF file format specifications' for details about the
341 See also: prs_iff, asm_initialize_system, asm_build_system
347 # name: <cell-element>
351 SBN file implementing standard models for p-mosfets.
355 # name: <cell-element>
362 # name: <cell-element>
366 -- Function File: [A,B,C]= Mresistors(STRING,PARAMETERS,
367 PARAMETERNAMES,EXTVAR,INTVAR,T)
368 SBN file implementing models for resistors.
370 STRING is used to select among models. Parameters are listed as
371 inner items. Possible models are:
373 1. STRING = "LIN" (Linear resistor)
374 - R -> resistance value
376 2. STRING = "THERMAL" (Linear resistor with termal pin)
377 - R0 -> reference resistance value at temperature `TNOM'
379 - TC1 -> coefficient for first order Taylor expansion
381 - TC2 -> coefficient for second order Taylor expansion
383 - TNOM -> reference temperature
385 3. STRING = "THERMAL1D" (1D Thermal resistor)
386 - L -> length of 1D domain
388 - N -> number of discretized elements
390 - cv -> PDE coefficient for dynamic part
392 - k -> PDE coefficient for diffusion part
394 See the `IFF file format specifications' for details about the
397 See also: prs_iff, asm_initialize_system, asm_build_system
403 # name: <cell-element>
407 SBN file implementing models for resistors.
411 # name: <cell-element>
415 Mshichmanhodgesmosfet
418 # name: <cell-element>
422 -- Function File: [A,B,C]= Mshichmanhodgesmosfet(STRING,PARAMETERS,
423 PARAMETERNAMES,EXTVAR,INTVAR,T)
424 SBN file implementing Schichman-Hodges MOSFETs model.
426 STRING is used to select among models. Possible models are:
428 1. STRING = "NMOS" (Schichman-Hodges n-MOSFET)
430 2. STRING = "PMOS" (Schichman-Hodges p-MOSFET)
432 Parameters for all the above models are:
433 * rd -> parasitic resistance between drain and source
437 * L -> channel length
439 * mu0 -> reference value for mobility
441 * Vth -> threshold voltage
443 * Cox -> oxide capacitance
445 * Cgs -> gate-source capacitance
447 * Cgd -> gate-drain capacitance
449 * Cgb -> gate-bulk capacitance
451 * Csb -> source-bulk capacitance
453 * Cdb -> drain-bulk capacitance
455 * Tshift -> shift for reference temperature on MOSFETs (default
458 See the `IFF file format specifications' for details about the
461 See also: prs_iff, asm_initialize_system, asm_build_system
467 # name: <cell-element>
471 SBN file implementing Schichman-Hodges MOSFETs model.
475 # name: <cell-element>
482 # name: <cell-element>
486 -- Function File: [A,B,C]= Mvoltagesources(STRING,PARAMETERS,
487 PARAMETERNAMES,EXTVAR,INTVAR,T)
488 SBN file implementing models for voltage sources.
490 STRING is used to select among models. Parameters are listed as
491 inner items. Possible models are:
493 1. STRING = "DC" (Static indipendent voltage source)
494 - V -> Current source value
496 2. STRING = "sinwave" (Sinusoidal indipendent voltage source)
497 - shift -> mean value of sinusoidal input
499 - Ampl -> amplitude of sinusoidal wave
501 - f -> frequency of sinusoidal wave
503 - delay -> delay of sinusoidal wave
505 3. STRING = "pwl" (Piecewise linear voltage source)
506 - takes as parameter times and values. For example `0 1 4
507 6' means at time instant 0 value 1, at time instant 4
510 4. STRING = "squarewave" (Square wave)
511 - low -> low-state value
513 - high -> high-state value
515 - tlow -> duration of low-state
517 - thigh -> duration of high-state
519 - delay -> delay of square wave
521 - start -> starting voltage value
523 5. STRING = "step" (Voltage step)
524 - low -> low-state value
526 - high -> high-state value
528 - tstep -> time instant of step transition
530 6. STRING = "VCVS" (Voltage controlled voltage source)
531 - K -> Control parameter
533 See the `IFF file format specifications' for details about the
536 See also: prs_iff, asm_initialize_system, asm_build_system
542 # name: <cell-element>
546 SBN file implementing models for voltage sources.