X-Git-Url: https://git.creatis.insa-lyon.fr/pubgit/?p=CreaPhase.git;a=blobdiff_plain;f=octave_packages%2Focs-0.1.3%2Fsbn%2Fdoc-cache;fp=octave_packages%2Focs-0.1.3%2Fsbn%2Fdoc-cache;h=93f1237d344c8ceaab7834b5e15127fae7b71439;hp=0000000000000000000000000000000000000000;hb=f5f7a74bd8a4900f0b797da6783be80e11a68d86;hpb=1705066eceaaea976f010f669ce8e972f3734b05

diff --git a/octave_packages/ocs-0.1.3/sbn/doc-cache b/octave_packages/ocs-0.1.3/sbn/doc-cache
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+# Created by Octave 3.6.1, Sun Mar 25 17:34:24 2012 UTC <root@t61>
+# name: cache
+# type: cell
+# rows: 3
+# columns: 10
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 11
+Mcapacitors
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 968
+ -- Function File: [A,B,C]= Mcapacitors(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing models for capacitors.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "LIN"  (Linear Capacitor)
+             - C -> capacitance value
+
+       2. STRING = "MULTICAP" (Multipole Capacitor)
+             - C -> capacitance values
+
+       3. STRING = "PDE_NMOS" (Drift-Diffusion PDE NMOS capacitor)
+             - tbulk  -> bulk thickness
+
+             - tox    -> oxide thickness
+
+             - Nnodes -> number of nodes of 1D grid
+
+             - Na     -> bulk doping
+
+             - toll   -> absolute tolerance
+
+             - maxit  -> max iterations number
+
+             - Area   -> device area
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 44
+SBN file implementing models for capacitors.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 15
+Mcurrentsources
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 1014
+ -- Function File: [A,B,C]= Mcurrentsources(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing models for current sources.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "DC" (Static indipendent current source)
+             - I -> Current source value
+
+       2. STRING = "VCCS" (Voltage controlled current source)
+             - K -> Control parameter
+
+       3. STRING = "sinwave" (Sinusoidal indipendent current source)
+             - shift -> mean value of sinusoidal input
+
+             - Ampl  -> amplitude of sinusoidal wave
+
+             - f     -> frequency of sinusoidal wave
+
+             - delay -> delay of sinusoidal wave
+
+       4. STRING = "VCPS" (Voltage controlled power source)
+             - K -> Control parameter
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 49
+SBN file implementing models for current sources.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 6
+Mdiode
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 937
+ -- Function File: [A,B,C]= Mdiode(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing models for diodes.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+        - STRING = "simple" (Usual exponential diode model)
+             - Is   -> reverse current
+
+             - Vth  -> thermal voltage
+
+             - Rpar -> parasitic resistance
+
+        - STRING = "PDEsymmetric" (Drift-Diffusion PDE model)
+             - len    -> diode length
+
+             - Nnodes -> number of nodes of 1D grid
+
+             - Dope   -> doping (abrupt and symmetric)
+
+             - toll   -> absolute tolerance
+
+             - maxit  -> max iterations number
+
+             - Area   -> device area
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 40
+SBN file implementing models for diodes.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 10
+Minductors
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 505
+ -- Function File: [A,B,C]= Minductors(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing models for inductors.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "LIN" (Linear inductor model)
+             - L -> inductance value
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 43
+SBN file implementing models for inductors.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 8
+Mnmosfet
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 1105
+ -- Function File: [A,B,C]= Mnmosfet(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing standard models for n-mosfets.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "simple" (Standard model for MOSFET)
+             - rd  -> parasitic resistance between drain and source
+
+             - k   -> k parameter for usual mosfet model
+
+             - Vth -> threshold voltage
+
+       2. STRING = "lincap" (Adds RC parasitics)
+             - rd  -> parasitic resistance between drain and source
+
+             - k   -> k parameter for usual mosfet model
+
+             - Vth -> threshold voltage
+
+             - Rs  -> parasitic source resistance
+
+             - Rd  -> parasitic drain resistance
+
+             - Cs  -> gate-source capacitance
+
+             - Cd  -> gate-drain capacitance
+
+             - Cb  -> gate-bulk capacitance
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 52
+SBN file implementing standard models for n-mosfets.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 14
+Mpdesympnjunct
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 184
+ -- Function File: [J,G]= Mpdesympnjunct (LEN, DOPE, VA, AREA, NNODES,
+          TOLL, MAXIT, PTOLL, PMAXIT)
+     INTERNAL FUNCTION:
+
+     NOT SUPPOSED TO BE CALLED DIRECTLY BY USERS
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 19
+INTERNAL FUNCTION:
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 8
+Mpmosfet
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 1105
+ -- Function File: [A,B,C]= Mpmosfet(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing standard models for p-mosfets.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "simple" (Standard model for MOSFET)
+             - rd  -> parasitic resistance between drain and source
+
+             - k   -> k parameter for usual mosfet model
+
+             - Vth -> threshold voltage
+
+       2. STRING = "lincap" (Adds RC parasitics)
+             - rd  -> parasitic resistance between drain and source
+
+             - k   -> k parameter for usual mosfet model
+
+             - Vth -> threshold voltage
+
+             - Rs  -> parasitic source resistance
+
+             - Rd  -> parasitic drain resistance
+
+             - Cs  -> gate-source capacitance
+
+             - Cd  -> gate-drain capacitance
+
+             - Cb  -> gate-bulk capacitance
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 52
+SBN file implementing standard models for p-mosfets.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 10
+Mresistors
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 1080
+ -- Function File: [A,B,C]= Mresistors(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing models for resistors.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "LIN" (Linear resistor)
+             - R -> resistance value
+
+       2. STRING = "THERMAL" (Linear resistor with termal pin)
+             - R0   -> reference resistance value at temperature `TNOM'
+
+             - TC1  -> coefficient for first order Taylor expansion
+
+             - TC2  -> coefficient for second order Taylor expansion
+
+             - TNOM -> reference temperature
+
+       3. STRING = "THERMAL1D" (1D Thermal resistor)
+             - L  -> length of 1D domain
+
+             - N  -> number of discretized elements
+
+             - cv -> PDE coefficient for dynamic part
+
+             - k  -> PDE coefficient for diffusion part
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 43
+SBN file implementing models for resistors.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 21
+Mshichmanhodgesmosfet
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 1124
+ -- Function File: [A,B,C]= Mshichmanhodgesmosfet(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing Schichman-Hodges MOSFETs model.
+
+     STRING is used to select among models. Possible models are:
+
+       1. STRING = "NMOS" (Schichman-Hodges n-MOSFET)
+
+       2. STRING = "PMOS" (Schichman-Hodges p-MOSFET)
+
+     Parameters for all the above models are:
+        * rd     -> parasitic resistance between drain and source
+
+        * W      -> MOSFET width
+
+        * L      -> channel length
+
+        * mu0    -> reference value for mobility
+
+        * Vth    -> threshold voltage
+
+        * Cox    -> oxide capacitance
+
+        * Cgs    -> gate-source capacitance
+
+        * Cgd    -> gate-drain capacitance
+
+        * Cgb    -> gate-bulk capacitance
+
+        * Csb    -> source-bulk capacitance
+
+        * Cdb    -> drain-bulk capacitance
+
+        * Tshift -> shift for reference temperature on MOSFETs (default
+          0)
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 53
+SBN file implementing Schichman-Hodges MOSFETs model.
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 15
+Mvoltagesources
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 1643
+ -- Function File: [A,B,C]= Mvoltagesources(STRING,PARAMETERS,
+          PARAMETERNAMES,EXTVAR,INTVAR,T)
+     SBN file implementing models for voltage sources.
+
+     STRING is used to select among models. Parameters are listed as
+     inner items. Possible models are:
+
+       1. STRING = "DC" (Static indipendent voltage source)
+             - V -> Current source value
+
+       2. STRING = "sinwave" (Sinusoidal indipendent voltage source)
+             - shift -> mean value of sinusoidal input
+
+             - Ampl  -> amplitude of sinusoidal wave
+
+             - f     -> frequency of sinusoidal wave
+
+             - delay -> delay of sinusoidal wave
+
+       3. STRING = "pwl" (Piecewise linear voltage source)
+             - takes as parameter times and values. For example `0 1 4
+               6' means at time instant 0 value 1, at time instant 4
+               value 6, etc.
+
+       4. STRING = "squarewave" (Square wave)
+             - low   -> low-state value
+
+             - high  -> high-state value
+
+             - tlow  -> duration of low-state
+
+             - thigh -> duration of high-state
+
+             - delay -> delay of square wave
+
+             - start -> starting voltage value
+
+       5. STRING = "step" (Voltage step)
+             - low   -> low-state value
+
+             - high  -> high-state value
+
+             - tstep -> time instant of step transition
+
+       6. STRING = "VCVS" (Voltage controlled voltage source)
+             - K -> Control parameter
+
+     See the `IFF file format specifications' for details about the
+     output structures.
+
+     See also: prs_iff, asm_initialize_system, asm_build_system
+
+
+
+
+
+# name: <cell-element>
+# type: sq_string
+# elements: 1
+# length: 49
+SBN file implementing models for voltage sources.
+
+
+
+
+